COMPARATIVE ANALYSIS OF MOBILITY AND DOPANT NUMBER FLUCTUATION MODELS FOR THE THRESHOLD VOLTAGE FLUCTUATION ESTIMATION IN 45 NM CHANNEL LENGTH MOSFET DEVICE

VASILESKA, D., ASHRAF, N., WIRTH, G. I., SRINIVASAN, P., , COMPARATIVE ANALYSIS OF MOBILITY AND DOPANT NUMBER FLUCTUATION MODELS FOR THE THRESHOLD VOLTAGE FLUCTUATION ESTIMATION IN 45 NM CHANNEL LENGTH MOSFET DEVICE. In: Nanoelectronic Device Applications Handbook, ISBN: 9781466565234, CRC Press. http://www.crcpress.com/product/isbn/9781466565234, 2013.